JPS 79th Annual Meeting (2024)

^●41: Design and performance of a molecular beam epitaxy system for ultrathin van der Waals film growth; Nat'l. Central Univ. (NCU); Han-Wei Tsai，Ruei-Yu Wang，Meng-Kai Lin
42: Fabrication of heterogeneous thin films on Si surfaces with three-dimensional lined shapes utilizing selection of facet-surface orientations; Nara Inst. Sci. and Technol., SANKEN, Osaka Univ.^A, Grad. Sch. of Eng., Osaka Univ.^B; Kanako Tsubosaki, Yasunari Kimoto, Ni'matil Mabarroh, Naoki Ohashi, Kaito Matsue, Azusa N. Hattori^A, Hidekazu Tanaka^A, Daisetsu Toh^B, and Ken Hattori
43: Fabrication and evaluation of CaF₂ buffer layer on Si substrate for high crystalline quality of CuCl thin films; Grad. School of Eng., Univ. of Shiga Pref.^A, School of Eng., Univ. of Shiga Pref.^B; Ryuhei Kanazawa^A, Masayoshi Ichimiya^B, Takahiko Ban^B, Junichi Yanagisawa^B
44: Morophology and Structure of Particles with Al-SiO₂ System; Dept. Electr. Electron Eng., Tohoku Gakuin Univ.; Yuki Fujita, Jin Otsubo, Kohei Ishii, Hitoshi Suzuki
45: Refinement of in-situ images by machine learning on liquid-cell transmission electron microscopy; EMI, Kanazawa Univ., ILTS, Hokkaido Univ.^A, ILAS, Kyoto Univ.^B, WPI-ICReDD, Hokkaido Univ.^C; Hiroyasu Katsuno, Yuki Kimura^A, Tomoya Yamazaki^A, Ichigaku Takigawa^B,C
46: Fabrication and Electronic Structure of YbSb/GaSb(110); Grad. Sch. of Sci. Osaka Univ.^A, FBS Osaka Univ.^B, IMS^C; Yitong Chen^A, Takuto Nakamura^B,A, Ryo Ichikawa^A, Hiroka Yamaguchi^A, Kaito Nishihara^A, Kiyohisa Tanaka^C, Shin-ichi Kimura^B,A,C
^●47: Coexistence of multi-phases on chromium borides binary crystal observed by photoemission spectroscopy.; ISSP，Univ. Tokyo^A，Kyushu Univ.^B; Yanze Guan^A，Xiaoni Zhang^A，Masashige Miyamoto^A，Yuki Tsujikawa^A，Kunio Yubuta^B，Masafumi Horio^A，Iwao Matsuda^A
48: ARPES and STM Simulations for Moire Superstructures of Si(111)-r7xr3-In Surface; Kyoto Sangyo Univ., QUEMIX^A, Univ. of Tokyo^B; Kazuyuki Uchida, Jun-Ichi Iwata, Yu-ichiro Matsushita
49: Control of adsorption structure and selective modulation of luminescence energy of single molecules on insulating films by STM.; RIKEN^A, University of Tokyo^B, GIST^C, Univ. Ulsan^D; H. Nanbu^A,B, H. Imada^A, J. Ahn^C, M. Lee^B, M. Imai-Imada^A, X. Ouyang^A, A. Muranaka^A, J. Jung^D, H. Lim^C, Y. Kim^A,B
50: Annealing temperature dependence of electron stimulated luminescence from Nb:SrTiO₃; NAIST; Rima Horie, Sho Igaki, Sakura N. Takeda
51: Luminescence measurements on C60 molecular films using scanning tunneling microscopy; YCU, RIKEN, UT, YNU; L.Ogata, K.Kimura, K.Mochizuki, I. Katayama, H. Imada, T.Yokoyama, J.Takeda, Y.Kim
52: Humidity dependent electrical evaluation of Prussian Blue Analogues by multi-probe local measurements and impedance measurements; Univ. of Yamanashi; Yuki Sato，Yusuke Yoshida，Ichiro Shiraki
53: Fabrication of d-wave superconducting probes using cuprate superconductor Bi₂Sr_2-xCaCu₂O_8+δ; Department of Physics, Kanazawa Univ., School of Materials Science, Japan Advanced Institute of Science and Technology^A, Institute of Materials Science, Tsukuba Univ.^B; Takaya Shimokawa, Yukiko Obata, Toshu An^A, Takanari Kashiwagi^B and Yasuo Yoshida
54: Development of dilution-fridge STM with in-plane magnetic fields up to 14 T; Dept. of Phys. Kanazawa Univ.^A，Eng. and Tech. Dept. Kanazawa Univ.^B，ISSP, Univ. Tokyo^C，Kyushu Univ.^D; K. Sato^A，T. Takahashi^A，H. Maekawa^A，Y. Obata^A，K. Shimamura^B，M. Haze^C，Y. Hasegawa^C，T. Kawae^D，Y. Yoshida^A
55: Principle component analysis for spatially-resolved ARPES of epitaxial graphene grown on SiC substrate; Synchrotron Light Application Center, Saga Univ.; Masaki Imamura, Kazutoshi Takahashi
56: The Electronic state of the initial stage of hydrogen intercalation into the buffer layer on the SiC substrate; ISSP, Univ. of Tokyo, Faculty of Engineering, Kyushu Univ.^A, Dep. of Material Sci. and Eng., Tokyo Institute of Technology^B, KEK-IMSS^C; T. Iimori, K. Tanaka^A, T. Katano^B, T. Kaga^B, K. Ozawa^C, K. Mase^C, A. Visikovskiy^A, S. Tanaka^A, F. Komori^B, K. Nakatsuji^B
57: Substrate dependence of the electronic structure of Si(111)(√3×√3)-Sn; Dept. Phys., Tokyo Tech., IMS UVSOR^A; H. Nishimichi, K. Ishihara, K. Tanaka^A, S. Kaku, S. Ichinokura, T. Hirahara
58: Two-dimensional band structure of flat honeycomb Bi on low temperature Ag(111); Department of Electrical and Electronic Engineering, Saga University, Synchrotron Light Application Center, Saga Univ.^A; Haruto Ikeda, Masaki Imamura^A, Isamu Yamamoto^A, Junpei Azuma^A, Kazutoshi Takahashi^A
^●59: Growth of (Bi, Pb) atomic layer structures on semiconductor substrates; Waseda Univ.^A，Synchrotron Light Application Center，Saga Univ.^B，IMRAM，Thohoku Univ.^C; L. Konermann^A，H. Abe^A，M. Imamura^B，K. Takahashi^B，A. Takayama^A，C
60: Electronic states of nitride superconductor TiN thin film; Grad. School Eng., Osaka Univ., SL Center, Saga Univ.^A, NICT^B; Yuki Higuchi, Zihao Wang, Tomoki Nishioka, Shota Yamamoto, Hikaru Ishikawa, Shigemi Terakawa, Isamu Yamamoto^A, Hirotaka Terai^B, Kazuyuki Sakamoto
61: Relaxation and annihilation processes of excited electrons on germanium surfaces; Osaka Metropolitan Univ., Saga Univ.^A, Univ. Tokyo^B; Tomoki Nakagawa, Akihiro Fujimoto, ^○Jun'ichi Kanasaki, Isamu Yamamoto^A, Junpei Azuma^A, Susumu Fukatsu^B
^●62: Photoelectron spectroscopy from three-dimensional shaped materials: effect of geometry induced photo-reflection; Nara Inst. Sci. Technol.，SANKEN，Osaka Univ.^A，Grad. Sch. of Eng. Osaka Univ.^B，UVSOR Synchrotron Fac.，Inst. Mol. Sci.^C，Inst. Mech. Eng.，Dalian Jiaotong Univ.^D; Ni' matil Mabarroh，Juharni，Yasunari Kimoto，Yoshihiro Kitagawa，Kanako Tsubosaki，Rivaldo M. Tumbelaka，Yuki Ida，Wataru Imayama，Liliany N. Pamasi，Haobang Yang，Yuya Sakai，Tomoya Shimizu，Azusa N. Hattori^A，Shin-ichiro Tanaka^A，Shigemasa Suga^A，Hidekazu Tanaka^A，Daisetsu Toh^B，Kiyohisa Tanaka^C，Runcheng Wang^D，Fangzhun Guo^D，Ken Hattori
63: Carrier doping into compressed Sr₂IrO₄ thin film using hydrogen ion beam; Grad. Sch. of Sci., Kyoto Univ., Grad. Sch. of Sci., Ochanomizu Univ.^A; S. Hirata, A. Chikamatsu^A, M. Maesato, H. Kitagawa
64: Control of physical properties of LaMnO₃ thin films by hydrogen ion irradiation; Grad. Sch. Sci. Kyoto Univ.; S. Iwashita, S. Hirata, M. Maesato, H. Kitagawa
65: Mechanism of Photo-Induced Negative Differential Resistance at Silicon/Graphene Interface: Nonadiabatic Quantum Molecular Dynamics Simulations; Dept. of Phys., Kumamoto Univ., Univ. of Southern California^A; H. Hokyo，K. Ito，A. Koura，K. Shimamura，F. Shimojo，A. Nakano^A，R. K. Kalia^A，P. Vashishta^A
^●66: Electron confinement by pseudo-magnetic and pseudo-electric fields in periodically strained graphene; Kyushu Univ.; Anton Visikovskiy，Satoru Tanaka
67: First-principles study of electron transport properties in Fe-doped carbon nanotubes with molecular adsorption; Grad. Sch. of Eng., Hokkaido Univ.; Yuki Okada, Yoshiyuki Egami
68: Ab-initio Molecular Orbital Calculations of C₆₀ under Electric Field; Fac. of Pure and Appl. Sci., Univ. of Tsukuba; Daiki Kumagai, Shuya Hakata, Hirokazu Takaki, Hiroyuki Ishii, Yoichi Yamada, Nobuhiko Kobayashi
69: Angle-resolved photoemission spectroscopy of electron-doped Bi(110) ultra-thin films on epitaxial graphene; Synchrotron Light Application Center, Saga Univ.; Kazutoshi Takahashi, Masaki Imamura, Isamu Yamamoto, and Junpei Azuma
70: Measurement of surface structures induced by impurity carbon on Ir(111) using scanning tunneling microscopy; Dept. Adv. Mater. Sci., Univ. Tokyo; Keita Nishida, Yuuki Yasui, Yuuki Adachi, Yoshiaki Sugimoto
71: Surface confined metal-organic networks grown on Si(111)-quasi-5.5×5.5-In surface; Faculty of Engineering, Fukuoka University; T.Suzuki, K.Yagyu
72: Positron Annihilation Spectroscopy Study of the blackened TiO₂(110) surface by hydrogenation; Tokyo Gakugei Univ.^A, RCMNT, Housei Univ.^B, IIS, Univ. Tokyo^C, JAEA^D, AIST^E; M.Matsumoto^A, I. Kanazawa^A,B, K. Fukutani^C,D, K. Michishio^E, N. Oshima^E
73: Monochromatic emission from SiO₂/SiC interface defects by ultra-high vacuum process; Department of Physics, Tokyo Institute of Technology; Yasuaki Miyakawa, Satoru Ichinokura, Toru Hirahara
74: Quantum phenomena induced by hydrogen atoms absorbed or intruded in Nb-SNS Josephson Junction; Dept. of Applied Quantum Phys. Kyushu Univ., Dept. of Adv. Energy Eng.^A; Tai Zizhou, K. Miyakawa, Y. Haga, M. Shiga, K.Hashizume^A, T. Kawae
75: Coverage dependent self-assembly of Bis-diazaphenalene on Au(111); Yokohama City Univ., Tokyo Inst. Tech.^A; Teruuchi Koshi, Yokoyama Takashi, Suzuki Hiroaki^A, Haga Masaaki^A, Kawano Masaki^A
76: Model catalytic molecule 1,10-phenanthroline researched by low-temperature scanning tunneling microscopy; Dept. of Phys. Kanazawa Univ., Eng. And Tech. Dept. Kanazawa Univ.^A, Hokkaido Univ.^B, Kyusyu Univ.^C; Y. Kaneko, E. T. Man, R. Kobata, T.-Y. Cheng, Y. Obata, K Shimamura^A, K. Hayashida^B, K. Takeyasu^B, J. Nakamura^C, Y. Yoshida
77: Automation of controlling plasmon resonance for optical-STM; UTokyo, RIKEN^A; Yuki Fukuzumi, Rafael Jaculbia^A, Hiroshi Imada^A, Yoosoo Kim^A
78: Study of native oxide film formation process on magnesium surface using soft X-ray absorption spectroscopy and photoelectron spectroscopy; SAGA-LS，AIST^A; Eiichi Kobayashi，Kyoko K. Bando^A
79: Raman spectroscopy of small molecules adsorbed on surfaces at low temperature in vacuum; IMS^A, SOKENDAI^B; Nobuaki Oyamada^A, ^○Shion Goryo^A, ChengXiang Jin^A,B, Atsunori Sakurai^A,B, Toshiki Sugimoto^A,B
80: Optical property of Ag nanoparticle on graphene; Kyoto Univ.; H. Okuyama, S. Yamamoto, H. Ogawa, S. Hatta, T. Aruga
81: A first-principles study on a bias-voltage dependence of surface stress on Al(111); Univ. Tsukuba, AIST^A; Satoshi Hagiwara, Shoij Ishibashi^A, and Minoru Otani
82: Local anodic oxidation of suspended graphene using atomic force microscope; GSST Kumamoto Univ.，ARL Anritsu^A，RIEC Tohoku Univ.^B，FAST Kumamoto Univ.^C，IINa Kumamoto Univ.^D; K. Tanaka，Y. Kakizoe，T. Matsui^A，T. Otsuka^B，M. Hara^C,D
83: Cancellation
84: Prediction of physical properties of amorphous graphene using persistent homology; Grad. Sch. Eng. Sci., Osaka Univ., SANKEN, Osaka Univ.^A; Kosuke Yamazaki, Emi Minamitani^A
85: First-principles calculations on electronic state modulation by line defects and bending strain in single-layer MoS₂; Grad. Sch. of Eng., Hokkaido Univ.; Yushiro Shimizu, Yoshiyuki Egami
86: Defect-induced magnetism in Ar⁺ irradiated titanium oxide nanosheets; GSST, Kumamoto Univ.，Nagaoka Univ. Tech.^A，ISSP, Univ. Tokyo^B，HiSOR, Hiroshima Univ.^C，Tokyo Univ. Tech.^D，FAST, Kumamoto Univ.^E，IINa, Kumamoto Univ.^F; R. Kurogi，A. Funatsu^A，T. Yamauchi^B，Y. Hashimoto^B，A. Endo^B，M. Sawada^C，T. Ichii^D，K. Hara^D，M. Hara^E,F
^●87: Localization of topological surface/interface state in TiTe2/Bi2Te3 heterostructure; Nat'l. Central Univ. (NCU); Ruei-Yu Wang，Han-Wei Tsai，Meng-Kai Lin
88: Attempt to fabricate an intrinsic magnetic topological crystalline insulator by Mn intercalation to SnTe thin films; Dept. Phys., Tokyo Tech; Y. Fukushima, R. Akiyama, T. Nakamura, S. Ichinokura, T. Hirahara
89: Effect of Hydrogen Modification on Topological Superconductor Fe(Se,Te) thin flakes; Dept. of Phys. Univ. of Tokyo, Cryogenic Research Center, Univ. of Tokyo^A, Dept. of Science and Technology, Hirosaki University^B; S. Shimizu^@, R. Akiyama, R. Hobara, T. Fujii^A, Y. Uezono^B, T. Otsuka^B, T. Watanabe^B, S. Hasegawa
90: Automatically Flat Si(15 17 3) Surface with Low Symmetry; IMRAM Tohoku Univ., SRIS Tohoku Univ.^A, Graduate School of Science Tohoku Univ.^B; H. Telengut, B. Li, T.Abukawa^A, K.Haga^B

Program

Division 9 Poster Session